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| 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A SST-GP1215A2.4 GHz High Gain High Power PA Data Sheet FEATURES: * High Gain: - Typically 32 dB gain across 2.4-2.5 GHz over temperature 0C to +85C High linear output power: - >29 dBm P1dB - Please refer to "Absolute Maximum Stress Ratings" on page 4 - Meets 802.11g OFDM ACPR requirement up to 25 dBm - Added EVM~4% up to 23 dBm for 54 Mbps 802.11g signal - Added EVM~3.5% up to 23 dBm for application over 2.3-2.4 GHz or 2.5-2.6 GHz WiBro/WiMax frequency bands - Meets 802.11b ACPR requirement up to 25 dBm High power-added efficiency/Low operating current for both 802.11g/b applications - ~26%/300 mA @ POUT = 24 dBm for 802.11g - ~27%/350 mA @ POUT = 25 dBm for 802.11b Built-in Ultra-low IREF power-up/down control - IREF ~2 mA Low idle current - ~70 mA ICQ * High-speed power-up/down - Turn on/off time (10%-90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns * High temperature stability - ~1 dB gain/power variation between 0C to +85C - ~1 dB detector variation over 0C to +85C * Low shut-down current (< 0.1 A) * On-chip power detection * 25 dB dynamic range on-chip power detection * Simple input/output matching * Packages available - 16-contact VQFN (3mm x 3mm) * All non-Pb (lead-free) devices are RoHS compliant * * APPLICATIONS: * * * * WLAN (IEEE 802.11g/b) Home RF Cordless phones 2.4 GHz ISM wireless equipment * * PRODUCT DESCRIPTION The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP15A can be easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 32 dB gain with 26% power-added efficiency @ POUT = 24 dBm for 802.11g and 27% power-added efficiency @ POUT = 25 dBm for 802.11b. The SST12LP15A has excellent linearity, typically ~4% added EVM at 23 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 25 dBm. This device can be configured for applications with an added EVM of approximately 3.5%, up to 23 dBm over 2.3-2.4 GHz or 2.5-2.6 GHz WiBro/ WiMax frequency bands. SST12LP15A also has widerange (>25 dB), temperature-stable (~1 dB over 85C), single-ended/differential power detectors which lower users' cost on power control. (c)2006 SST Communications Corp. S71291-02-000 7/06 1 The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultralow reference current (total IREF ~2 mA) makes the SST12LP15A controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP15A ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications. The SST12LP15A is offered in 16-contact VQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet FUNCTIONAL BLOCKS VCC1 VCC2 14 NC 16 NC RFIN RFIN NC 1 2 3 15 13 12 VCC3 11 RFOUT 10 RFOUT Bias Circuit 4 5 VCCb 6 VREF1 7 VREF2 8 Det_ref 1291 B1.0 NC 9 Det FIGURE 1: Functional Block Diagram (c)2006 SST Communications Corp. S71291-02-000 7/06 2 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet PIN ASSIGNMENTS VCC1 VCC2 14 NC 16 NC RFIN RFIN NC 1 15 13 12 VCC3 Top View 2 3 4 RF and DC GND 0 5 VCCb 6 VREF1 7 VREF2 8 Det_ref 1291 16-vqfn P1.0 NC 11 RFOUT 10 RFOUT 9 Det (contacts facing down) FIGURE 2: Pin Assignments for 16-contact VQFN PIN DESCRIPTIONS TABLE 1: Pin Description Symbol GND NC RFIN RFIN NC VCCb VREF1 VREF2 Det_ref Det RFOUT RFOUT VCC3 NC VCC2 NC VCC1 Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Power Supply No Connection Power Supply No Connection Power Supply PWR PWR No Connection Power Supply PWR PWR PWR O O O O PWR Pin Name Ground No Connection I I Type1 Function The center pad should be connected to RF ground with several low inductance, low resistance vias. Unconnected pins. RF input, DC decoupled RF input, DC decoupled Unconnected pins. Supply voltage for bias circuit 1st and 2nd stage idle current control 3rd stage idle current control On-chip power detector reference On-chip power detector RF output RF output Power supply, 3rd stage Unconnected pins. Power supply, 2nd stage Unconnected pins. Power supply, 1st stage T1.0 1291 1. I=Input, O=Output (c)2006 SST Communications Corp. S71291-02-000 7/06 3 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 3 through 12 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Input power to pins 2 and 3 (PIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm Average output power (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 dBm Supply Voltage at pins 5, 12, 14, 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V Reference voltage to pins 6 (VREF1) and pin 7 (VREF2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds 1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating of average output power could cause permanent damage to the device. Operating Range Range Industrial Ambient Temp -40C to +85C VCC 3.3V TABLE 2: DC Electrical Characteristics Symbol VCC ICC Supply Current for 802.11g, 24 dBm for 802.11b, 25 dBm ICQ IOFF VREG1 VREG2 Idle current for 802.11g to meet EVM<4% @ 23dBm Shut down current Reference Voltage for 1st Stage, with 169 resistor Reference Voltage for 2nd Stage, with 140 resistor 2.85 2.85 2.90 2.90 300 350 70 0.1 2.95 2.95 mA mA mA A V V T2.1 1291 Parameter Supply Voltage at pins 5, 12, 14, 16 Min. 3.0 Typ 3.3 Max. 4.2 Unit V Test Conditions (c)2006 SST Communications Corp. S71291-02-000 7/06 4 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet TABLE 3: AC Electrical Characteristics for Configuration Symbol FL-U FL-U FL-U POUT Parameter Frequency range in 802.11b/g applications (see Figure 13) Frequency range in 2.3-2.4 GHz applications (see Figure 14) Frequency range in 2.5-2.6 GHz applications (see Figure 15) Output power @ PIN = -10 dBm 11b signals @ PIN = -10 dBm 11g signals G GVAR1 GVAR2 Small signal gain Gain variation over each band (2400-2485 MHz) Gain ripple over channel (Gain variation over 20 MHz) 10 24 24 25 25 3.5 -40 0.2 31 23 23 32 0.5 dBm dBm dB dB dB second dBm dBm % dBc T3.2 1291 Min. 2400 2300 2500 Typ Max. 2485 2400 2600 Unit MHz MHz MHz Output VSWR Survivable time@ 25 dBm (to 50) Ruggedness 54 Mbps OFDM signal when VSWR=10:1 all phases ACPR Added EVM 2f, 3f, 4f, 5f Meet 11b spectrum mask Meet 11g OFDM 54 MBPS spectrum mask @ 23 dBm output with 11g OFDM 54 MBPS signal Harmonics at 22 dBm, without trapping capacitors (c)2006 SST Communications Corp. S71291-02-000 7/06 5 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, TA = 25C 0 40 -5 30 -10 20 S11 (dB) -15 10 S21 (dB) -20 0 -25 -10 -30 -20 -35 -30 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 Frequency (GHz) Frequency (GHz) 0 0 -10 -5 -20 -10 -30 S12 (dB) -40 S22 (dB) -15 -50 -20 -60 -25 -70 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 -30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 Frequency (GHz) Frequency (GHz) FIGURE 3: S-Parameters 33.0 32.8 32.6 0.0 -5.0 -10.0 32.4 Return Loss (dB) -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 2.30 2.35 2.40 2.45 2.50 2.55 2.60 1291 In-band-R.0.0 32.2 Gain (dB) 32.0 31.8 31.6 31.4 31.2 31.0 2.30 2.35 2.40 2.45 2.50 2.55 2.60 1291 S-Parms.0.0 Frequency (GHz) Frequency (GHz) FIGURE 4: In-band Return Loss FIGURE 5: In-band Gain Flatness (c)2006 SST Communications Corp. S71291-02-000 1291 In-band-G.0.0 7/06 6 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: F1 = 2.45 GHZ, F2 = 2.451 GHZ, VCC = 3.3V, TA = 25C 40 38 500 450 Supply Current (mA) 36 400 350 300 1291 IccVSPout.0.0 26 Power Gain (dB) 34 32 1291 GainVSPout.0.0 30 28 26 24 22 20 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz 250 200 150 100 50 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz Output Power (dBm) Output Power (dBm) FIGURE 6: Gain vs POUT FIGURE 8: ICC vs POUT 1.80 -20 -25 -30 -35 1291 IM3VSPout.0.0 1.70 1.60 Detector Voltage (V) Freq=2.412 GHz Freq=2.442 GHz 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0 2 4 6 8 10 12 14 16 18 20 22 24 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz IMD3 (dBc) Freq=2.484 GHz -40 -45 -50 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Output Power (dBm) Output Power (dBm) FIGURE 7: IM3 vs POUT FIGURE 9: Detectors vs POUT (c)2006 SST Communications Corp. S71291-02-000 1291 DetVSPout.0.0 7/06 7 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, TA = 25C, 54 MBPS 802.11G OFDM SIGNAL 10 0 -1 0 Freq = 2.412 GHz Freq = 2.442 GHz Freq = 2.484 GHz Amplitude (dB) -2 0 -3 0 -4 0 -5 0 -6 0 -7 0 2.35 2.40 2.45 2.50 2.55 1291 F09.0 Frequency (GHz) FIGURE 10: 802.11g Spectrum Mask at 24 dBm, DC current 300 mA EVM versus Output Power 10 9 8 7 Freq = 2.412 GHz Freq = 2.442 GHz Freq = 2.484 GHz EVM (%) 6 5 4 3 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 1291 AddEVM.0.0 Output Power (dBm) FIGURE 11: 802.11g Spectrum Mask at 23/24 dBm, DC current 240/290 mA (c)2006 SST Communications Corp. S71291-02-000 7/06 8 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, TA=25C, 1 MBPS 802.11B CCK SIGNAL 10 0 -10 Amplitude (dB) -20 -30 -40 -50 -60 -70 -80 2.35 2.40 2.45 Frequency (GHz) FIGURE 12: 802.11b Spectrum Mask at 25 dBm, DC current 350 mA 1291 F11.0 Freq = 2.412 GHz Freq = 2.442 GHz Freq = 2.484 GHz 2.50 2.55 0.1 F 100pF 100pF 10 F Vcc 12nH/0805 Inductor 16 1 15 14 13 12 50 /85mil 50 RFin 2 11 50 /120mil 50 RFout 3 2.2nH* 4 5 6 7 8 Biascircuit 10 2.7pF 9 Suggested operation conditions: 1 VCC = 3.3V 2. Center slug to RF ground 3. VREG1=VREG2=2.90V with R1=169 and R2=140 * Could be removed if -7 dB return loss is acceptable 1291 Schematic.0.6 0.1 F R3 100 100pF R1 169 100pF R2 140 10pF 10pF VREG 1 VREG 2 Det_ref Det FIGURE 13: Typical Schematic for High-Power, High-Efficiency 802.11b/g Applications (c)2006 SST Communications Corp. S71291-02-000 7/06 9 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet 0.1 F 0.1 F 0.1 F 1000 pF 10 F Vcc 3 nH/0805 Inductor 16 1 15 14 13 12 50 /95mil 50 RFin 2 11 50 /105 mil 50 RFout 3 2.7 nH* 4 5 6 7 8 Biascircuit 10 3.0 pF 9 Suggested operation conditions: 1 VCC = 3.3V 2. Center slug to RF ground 3. VREG1=VREG2= 2.85-2.90V with R1=160 * Could be removed if -7 dB return loss is acceptable 1291 Schematic.1.0 0.1 F R2 100 100pF R1 160 100pF 10pF 10pF VREG 1 VREG 2 Det_ref Det FIGURE 14: Typical Schematic for High-Power, High-Efficiency 2.3-2.4 GHz Applications 0.1 F 0.1 F 0.1 F 1000 pF 10 F Vcc 10nH/0805 Inductor 16 1 15 14 13 12 50 /90 mil 50 RFin 2 11 50/95 mil 50 RFout 3 2.7nH* 4 5 6 7 8 Biascircuit 10 2.7pF 9 Suggested operation conditions: 1 VCC = 3.3V 2. Center slug to RF ground 3. VREG1=VREG2=2.90-2.95 V with R1=169 and R2=140 * Could be removed if -7 dB return loss is acceptable 1291 Schematic.2.0 0.1 F R3 100 100pF R1 169 100pF R2 140 10pF 10pF VREG 1 VREG 2 Det_ref Det FIGURE 15: Typical Schematic for High-Power, High-Efficiency 2.5-2.6 GHz Applications (c)2006 SST Communications Corp. S71291-02-000 7/06 10 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet PRODUCT ORDERING INFORMATION SST12LP SSTXXLP 15A - QVC XXX - XXX E X Environmental Attribute E1 = non-Pb contact (lead) finish Package Modifier C = 16 contact Package Type QV = VQFN Version Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = SST Communications 1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant". Valid combinations for SST12LP15A SST12LP15A-QVCE SST12LP15A Evaluation Kits SST12LP15A-QVCE-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c)2006 SST Communications Corp. S71291-02-000 7/06 11 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet PACKAGING DIAGRAMS TOP VIEW SIDE VIEW 0.2 BOTTOM VIEW See notes 2 and 3 Pin #1 1.7 Pin #1 3.00 0.075 1.7 0.075 0.5 BSC 3.00 0.075 0.05 Max 1.00 0.80 0.30 0.18 0.45 0.35 1mm Note: 1. Complies with JEDEC JEP95 MO-220J, variant VEED-4 except external paddle nominal dimensions. 2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). 16-vqfn-3x3-QVC-2.0 FIGURE 16: 16-contact Very-thin Quad Flat No-lead (VQFN) SST Package Code: QVC TABLE 4: Revision History Revision 00 01 Description Date Mar 2005 Mar 2006 * * * * * * * * * Initial release of data sheet Updated values for gain and efficiency on page 1 Updated values for VREG1 and VREG2 in Table 2 on page 4 Removed stability parameter from Table 3 on page 5 Updated the typical application schematic on page 9 Updated QVC package drawing. Updated "Absolute Maximum Stress Ratings" on page 4 Added information for 2.3-2.4 and 2.5-2.6 applications Removed leaded part numbers 02 Jul 2006 (c)2006 SST Communications Corp. S71291-02-000 7/06 12 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet CONTACT INFORMATION Marketing SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605 Sales NORTH AMERICA Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - North America Tel: 949-495-6437 Fax: 949-495-6364 E-mail: lcrowder@sst.com ASIA PACIFIC NORTH SST Macao H. H. Chang Senior Director, Sales Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: (853) 706-022 Fax: (853) 706-023 E-mail: hchang@sst.com ASIA PACIFIC SOUTH SST Communications Co. Sunny Tzeng Sales Manager 4F-2, No. 24, Lane 123, Sec.6, Min Chuan E. Rd Taipei 114, Taiwan, R.O.C. Tel: +886-22795-6877 Ext. 163 Fax: +886-9792-1241 E-mail: stzeng@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com EUROPE Silicon Storage Technology Ltd. Ralph Thomson Applications Manager Mark House 9-11 Queens Road Hersham KT12 5LU UK Tel: +44 (0) 1869 321 431 Cell: +44 (0) 7787 508 919 E-mail: rthomson@sst.com JAPAN SST Japan Kiyomi Akaba Senior Sales Manager 9F Toshin-Tameike Bldg, 1-1-14 Akasaka, Minato-ku, Tokyo, Japan 107-0052 Tel: (81) 3-5575-5515 Fax: (81) 3-5575-5516 Email: kakaba@sst.com Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com (c)2006 SST Communications Corp. S71291-02-000 7/06 13 |
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